Osaka University is an expert in the development of semiconductors intracenter photonics. This novel photonics uses the intra 4f shell transitions of rare-earth ions doped in semi-conductors. A narrow band light-emitting diode (LED) using Eu doped GaN (GaN:EU) was invented here in 2009. Due to the optimization of the device processing, the output power of the LED has been increasing steadily to over 1mW. Now, the research team will move on to the final step for the development of the GAN:Eu red LED. They will further enhance the output parameters by intentional manipulation of the radiative recombination probability at the atomic level of the EU ions. Subsequently, they will extend this approach to other RE ions for the realisation of a RE based full-colour high-resolution display with exceptional characteristics. This work was partially supported by JSPS KAKENHI (Grant No. 18H05212).